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Company Profile

Company Profile

Since 1998. Hynix Semiconductor Manufacturing America (HSMA) has been manufacturing various forms of Dynamic Random Access Memory (DRAM). One of the largest fabs in the world, HSMA also manufactures Synchronous DRAM, a type of DRAM that can run at much higher clock speeds than conventional memory.

HSMA Timeline

May 1995 Plan to build a new FAB in Eugene, Oregon, announced
Feb. 1996 Ground breaking
April 1996 First HSMA Board meeting held.
Jan. 1998 Production of 2nd generation 64M DRAM starts
May 1998 Grand opening and start of 3rd generation 64M DRAM production
Dec. 1998 Production of 4th 64M DRAM starts
May 1999 HSMA ISO 9000 & 14000 certified
June 2001 1st silicon of Blue Chip 256M DRAM production starts
March 2003 Tool upgrade for Prime Chip Technology starts
Jan. 2004 Tool upgrade for Golden Chip Technology starts