In preparation for IDF Fall 2003, Hynix Semiconductor, Inc. (www.hynix.com) announced it has submitted 512Mb DDR2 SDRAM devices to Intel Corporation for evaluation and its samples are successfully booting with Intel's next generation dual processor server chipset code named ?Lindenhurst.The Hynix 512Mb DDR2 SDRAM is currently available in sample quantities with mass production scheduled for early 2004.
Hynix' DDR2 technology is geared for Intel' next generation server, workstation, desktop, and mobile platforms starting in 2004,said Pete MacWilliams, Senior Fellow Intel Corporation. ?DDR2 memory technology is especially beneficial in rack mount server systems as it provides better performance while reducing power consumption.
The Hynix 512Mb DDR2 SDRAM devices will serve as the basis for its DDR2 DIMMs and will enable OEMs and system developers to deliver stable and highperformance DDR2 platforms for server, workstation and personal computing. The Hynix 512Mb DDR2 SDRAM evaluation for validation by Intel follows its 512Mb DDR400 validation in June of 2003 and further demonstrates the Hynix leadership position in the highspeed DDR memory market.
According to Farhad Tabrizi, Vice President of Worldwide Marketing, Hynix projects a surge in demand for DDR2 memory products throughout 2004 as the server and PC industry adopt various Intel chipsets supporting DDR2 memory architecture.
The Hynix 512Mb DDR2 SDRAM devices are designed and manufactured on the company' advanced .11micron Golden Chip process technology. The devices being developed can operate at a data transfer rate of up to 667 (Mbps) per pin at 1.8 V and are offered in 128M x 4 bits, 64M x 8 bits, and 32M x 16 bits configurations in a FBGA package and fully comply with JEDEC DDR2 specifications and standards.
Hynix Semiconductor Inc. (Hynix,www.hynix.com), announced today it has developed a 500MHz 256Mbit DDR SDRAM and will begin its fullscale volume production in August 2003.
The newly introduced DDR500, a highperformance PC main memory device, runs at 500MHz and will be available in FBGA, TSOP or QFP package. The DDR500 product line up is aimed towards the gaming market enthusiasts who tend to require higher frequencies and system performance.
The main memory DDR500 follows the introduction a 500MHz graphic memory last year and will be manufactured using the company's Prime Chip 0.13micron process technology.
Currently, the main memory DRAM market is experiencing a rapid transition in demand from DDR266 to DDR333/400. Hynix expects the DDR500 to demand a 1020% premium relative to DDR400 due to limited supply.
Hynix aims to continue to maintain and expand its leadership position in the highperformance PC, workstation and computer game consol markets, requiring ultra highspeed memory products. Hynix is dedicated to maintaining its competitive edge in the highspeed memory market through continuous development of ultra highspeed devices.
Hynix Semiconductor Inc. today announced it has launched volume production of its "Handy SDRAM," an ultralow power mobile SDRAM used in next generation mobile telecommunication handsets, Personal Digital Assistants (PDAs), Digital Still Cameras and various other consumer products.
Handy SDRAM, with an operating voltage of 1.8V in a 54Ball FBGA package will be manufactured using the company's .13micron process technology. "The Handy SDRAM addresses the mobile market's need for large amounts of memory with an extended battery life. We expect the low power DRAM market to exceed $1.5 billion by 2006 and expect to penetrate and capture a significant portion of this market through aggressive promotion of Handy SDRAM," said Farhad Tabrizi, Vice President of Worldwide Marketing at Hynix.
Hynix has applied various leadingedge lowpower technologies such as Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR), Deep Power Down (DPD), and Driver Strength (DS) validated by JEDEC, the semiconductor engineering standardization body, to maximize the efficiency of the product performance. Furthermore, by applying its "Automatic TCSR" technology geared to control selfrefresh and speed within the DRAM cell, Hynix can further reduce power consumption while increasing speed.
About Hynix Semiconductor Inc.
Hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of highquality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. Hynix Semiconductor is the world's leading DRAM supplier with thirteen semiconductormanufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, Hynix is expanding its system IC business unit with leading technology and added deep submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Hynix maintains worldwide development, manufacturing, sales and marketing facilities.
Hynix Semiconductor Inc. today announced it has developed a 500MHz128Mb (4Mx32) DDRI SDRAM for supply to the graphic chipset manufacturing market.
This high speed DDRI SDRAM product, an industry first, features 500MHz frequency ( 1Gbps) speed, 32bit wide I/O and 144ball FBGA package type. The new product supports the high speed needs of desktop and work station graphics and switch and router applications.
The new product has the highest speed in the DDRI product line and is compatible with the DDRI board. Hynix forecasts the combination of speed, compatibility, and an estimated cost advantage of 10% over DDRII, will gain quick acceptance for the new product from the graphics and network industries. Farhad Tabrizi, Vice President of Worldwide Marketing, stated "providing the highest performance at the lowest possible price is the key for differentiating the product by end application. DDRI at 500 MHz does just that."
Samples of the product, reaffirming the company' position as a frequency leader, have already been distributed to major graphic chipset manufacturers. Hynix will introduce availability of a 500 MHz 4Mx32 DDRII SDRAM in Q1 2003.
Hynix Semiconductor Manufacturing America Inc, Eugene OR, is registered by Underwriters Laboratories Inc to
